Self-Heating and Trapping Effects in GaN HEMT Models
Source: SPICE Model Original Author: Ruo Ming The rapid adoption of Gallium Nitride (GaN) technology in 5G base stations, satellite communications, and other applications has raised the bar for transistor modeling. In particular, the latest version of ADS supports ASM-HEMT 101.4 and MVSG_CMC 3.2.0 GaN HEMT models. For device modeling engineers, accurately extracting the model … Read more