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Gallium Nitride (GaN) transistors emerged in the 1990s and are now widely used in commercial and defense fields, but engineering applications may vary significantly. Don’t believe it? That’s understandable. However, after reading this article, you might become a loyal supporter.
The popularity of GaN is rooted in its high power and high voltage capabilities. These features make it suitable for many applications, including microwave radio frequency (RF) and power switching applications.
The unique material properties of GaN make it the new preferred technology for many applications, such as 5G communications, automotive, lighting, radar, and satellite applications. But GaN manufacturers and developers are not stopping there. They continue to advance GaN through technological revolutions. These innovations will continue to open up new application areas in the future.
After reading this article, you will understand how GaN is revolutionizing the electronic engineering industry and how it continues to maintain this momentum.
As mentioned earlier, most assumptions are no longer related to usage; nonetheless, we still make the following assumptions. We primarily assume that you are a stakeholder in the technology or semiconductor industry and have been following technologies like GaN for a long time. You could be an engineer, design architect, technician, technical manager, salesperson, technical trainee, or investor. We also assume that you have a certain understanding of semiconductor technology.
Gallium Nitride (GaN) technology is a relatively new semiconductor technology that is revolutionizing the world today. The advantages of GaN stem from its unique material properties: wide bandgap, high breakdown voltage, high thermal conductivity, high electron mobility, and high saturation electron velocity.
First, we will introduce some basic facts about GaN and its advantages, followed by an investigation of the industries and applications that use GaN.
In the early 1990s, the potential of GaN as a high-power and high-frequency semiconductor transistor material was first recognized, leading to continuous exploration. By the mid-2000s, GaN was already in production applications in defense and aerospace, as well as in commercial applications for solid-state lighting LEDs.
Since then, GaN has gradually been accepted in the RF electronics field and widely deployed in commercial wireless applications like 5G. Improvements in GaN materials enable high power density and high-efficiency RF amplifiers, driving the application of RF technology.
Like Gallium Arsenide (GaAs) and Indium Gallium Phosphide (InGaP), GaN is a III-V direct bandgap semiconductor technology. III-V compound semiconductors are alloys containing elements from groups III and V of the periodic table.
Many semiconductor market analysts still describe GaN as a relatively new technology. However, in just a few years, GaN has leaped from a newcomer to a leader in many application areas. GaN not only replaces entrenched existing silicon technologies, such as Laterally Diffused Metal Oxide Semiconductors (LDMOS), but also helps improve overall system performance when used in combination with other technologies like GaAs.
GaN is able to complement the shortcomings of existing technologies like GaAs, thereby accelerating its adoption in defense and commercial applications. GaN also helps improve system performance to meet the demands of next-generation systems for higher power, frequency, and efficiency. Therefore, it is becoming the preferred technology for new RF applications with wider bandwidths and higher frequencies.
In addition, if you want to learn about GaN’s global market impact and how it compares to other technologies, please click to read the original article for more information.
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